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BCX13 Datasheet(Fiches technique) 2 Page - Siemens Semiconductor Group

Numéro de pièce BCX13
Description  PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
Télécharger  4 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCX13 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
BCX 13
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics for transistor T1
V
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CE0
125
Collector-base breakdown voltage
IC = 100
µA, IB = 0
V(BR)CB0
125
Emitter-base breakdown voltage
IE = 10
µA, IC = 0
V(BR)EBS
5––
nA
µA
Collector-base cutoff current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 150 ˚C
ICB0
100
10
nA
Emitter cutoff current
VEB = 4 V
IEB0
100
DC current gain1)
IC = 1 mA,VCE = 1 V
IC = 10 mA,VCE = 1 V
IC = 100 mA,VCE = 1 V
IC = 200 mA,VCE = 1 V
hFE
25
50
63
40
V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
1.0
Base-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VBEsat
1.6
MHz
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
120
pF
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–12
AC characteristics
1)
Pulse test:
t
≤ 300 µs, D ≤ 2 %.


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