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BCW65C Fiches technique(PDF) 3 Page - Siemens Semiconductor Group |
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BCW65C Fiches technique(HTML) 3 Page - Siemens Semiconductor Group |
3 / 6 page BCW 65 BCW 66 Semiconductor Group 3 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 V(BR)CE0 32 45 – – – – nA nA µA µA Collector cutoff current VCB = 32 V BCW 65 VCB = 45 V BCW 66 VCB = 32 V, TA = 150 ˚C BCW 65 VCB = 45 V, TA = 150 ˚C BCW 66 ICB0 – – – – – – – – 20 20 20 20 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 V(BR)CB0 60 75 – – – – Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5–– – DC current gain1) IC = 100 µA, VCE = 10 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 10 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 100 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 500 mA, VCE = 2 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H hFE 35 50 80 75 110 180 100 160 250 35 60 100 – – – – – – 160 250 350 – – – – – – – – – 250 400 630 – – – nA Emitter-base cutoff current, VEB = 4 V IEB0 ––20 1) Pulse test: t ≤ 300 µs, D = 2 %. |
Numéro de pièce similaire - BCW65C |
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Description similaire - BCW65C |
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