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ADC1112D125 Fiches technique(PDF) 7 Page - NXP Semiconductors |
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ADC1112D125 Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 41 page ADC1112D125 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 March 2011 7 of 41 NXP Semiconductors ADC1112D125 Dual 11-bit ADC: CMOS or LVDS DDR digital outputs 7. Limiting values 8. Thermal characteristics [1] Value for six layers board in still air with a minimum of 64 thermal vias. 9. Static characteristics Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VO output voltage pins DA10 to DA0 and DB10 to DB0 or pins DA9_DA10_P to LOW_DA0_P, DA9_DA10_M to LOW_DA0_M, DB9_DB10_P to LOW_DB0_P and DB9_DB10_M to LOW_DB0_M −0.4 +3.9 V VDDA analog supply voltage −0.4 +3.9 V VDDO output supply voltage −0.4 +3.9 V Tstg storage temperature −55 +125 °C Tamb ambient temperature −40 +85 °C Tj junction temperature - 125 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient [1] 15.6 K/W Rth(j-c) thermal resistance from junction to case [1] 6.3 K/W Table 6. Static characteristics[1] Symbol Parameter Conditions Min Typ Max Unit Supplies VDDA analog supply voltage 2.85 3.0 3.4 V VDDO output supply voltage CMOS mode 1.65 1.8 3.6 V LVDS DDR mode 2.85 3.0 3.6 V IDDA analog supply current fclk =125 Msps; fi =70MHz - 400 - mA IDDO output supply current CMOS mode; fclk =125 Msps; fi =70MHz -16 - mA LVDS DDR mode: fclk =125 Msps; fi =70MHz -82 - mA P power dissipation ADC1112D125; analog supply only - 1230 - mW Power-down mode - 24 - mW Sleep mode - 80 - mW |
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