BC850B datasheet(3/8 Pages) SIEMENS

No de pièce	BC850B

Description	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

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BC 846 ... BC 850

Semiconductor Group

3

Electrical Characteristics

1)Pulse test: t

≤ 300 µs, D = 2 %.

V

Collector-emitter breakdown voltage

IC = 10 mA

BC 846

BC 847, BC 850

BC 848, BC 849

V(BR)CE0

65

45

30

–

nA

µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

15

5

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

BC 846

BC 847, BC 850

BC 848, BC 849

V(BR)CB0

80

50

30

–

Emitter-base breakdown voltage

IE = 1

µA

BC 846, BC 847

BC 848, BC 849, BC 850

V(BR)EB0

6

5

–

mV

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

90

200

250

600

–

DC current gain

IC = 10

µA, VCE = 5 V

BC 846 A, BC 847 A, BC 848 A

BC 846 B … BC 850 B

BC 847 C, BC 848 C, BC 849 C, BC 850 C

IC = 2 mA, VCE = 5 V

BC 846 A, BC 847 A, BC 848 A

BC 846 B … BC 850 B

BC 847 C, BC 848 C, BC 849 C, BC 850 C

hFE

–

110

200

420

140

250

480

180

290

520

–

220

450

800

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

700

900

–

Collector-emitter breakdown voltage

IC = 10

µA, VBE = 0

BC 846

BC 847, BC 850

BC 848, BC 849

V(BR)CES

80

50

30

–

Base-emitter voltage

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(on)

580

–

660

–

700

770

at TA = 25 ˚C, unless otherwise specified.

Numéro de pièce similaire - BC850B

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