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BC857S Fiches technique(PDF) 3 Page - Siemens Semiconductor Group

No de pièce BC857S
Description  PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BC857S Fiches technique(HTML) 3 Page - Siemens Semiconductor Group

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BC 857S
Semiconductor Group
May-12-1998
3
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
typ.
max.
AC Characteristics per Transistor
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
250
MHz
-
-
fT
Ccb
-
-
3
Collector-base capacitance
VCB = 10 V, f = 1 MHz
pF
10
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
-
-
Ceb
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
h11e
-
4.5
-
k
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
h12e
-
2
10-4
-
Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
-
-
330
h21e
-
µS
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
h22e
-
30
-


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