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BC846W-BC850W Fiches technique(PDF) 3 Page - Siemens Semiconductor Group

No de pièce BC846W-BC850W
Description  NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BC846W-BC850W Fiches technique(HTML) 3 Page - Siemens Semiconductor Group

  BC846W-BC850W Datasheet HTML 1Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 2Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 3Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 4Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 5Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 6Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 7Page - Siemens Semiconductor Group BC846W-BC850W Datasheet HTML 8Page - Siemens Semiconductor Group  
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BC 846W ... BC 850W
Semiconductor Group
3
Characteristic at TA = 25 ˚C, unless otherwise specified.
DC current gain
IC = 10
µA, VCE = 5 V BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
IC = 2 mA, VCE = 5 V
BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
V
Collector-emitter breakdown voltage
IC = 10 mA
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V(BR)CEO
65
45
30
nA
µA
Collector-base cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICBO
15
5
Unit
Ratings
Description
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-base breakdown voltage1)
IC = 100
µA
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V(BR)CBO
80
50
30
V
Emitter-base breakdown voltage
IE = 10
µA
BC 846 W, BC 847 W
BC 848 W, BC 849 W
BC 850
V(BR)EBO
6
5–
mV
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
90
900
250
650
hFE
140
250
480
180
290
520
220
450
800
V
Collector-emitter breakdown voltage
IC = 10
µA, VBE = 0
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V(BR)CBO
80
50
30
mV
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
700
900
mV
Base-emitter voltage1)
IC = 2 mA, VCE = 0.5 mA
IC = 10 mA, VCE = 5 mA
VCEsat
580
660
700
770
110
200
420
1)Pulse test : t
300 µs, D= 2 %.


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
BC847PN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage 1  2  3  4  5  More Siemens Semiconductor Group
BC856S PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage 1  2  3  4  5  More Siemens Semiconductor Group
BC857S PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage 1  2  3  4  5  More Siemens Semiconductor Group
BC856-BC860 PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage 1  2  3  4  5  More Siemens Semiconductor Group
BC856W-BC860W PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage 1  2  3  4  5  More Siemens Semiconductor Group
BC847S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain 1  2  3  4  5  More Siemens Semiconductor Group
BC846PN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain 1  2  3  4  5  More Siemens Semiconductor Group
BC846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain 1  2  3  4  5  More Siemens Semiconductor Group
BCW60 NPN Silicon AF Transistors For AF input stages and driver applications High current gain 1  2  3  4  5  More Siemens Semiconductor Group
BC846-BC850 NPN Silicon AF Transistors For AF input stages and driver applications High current gain 1  2  3  4  5  More Siemens Semiconductor Group

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