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BC817-16W Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

No de pièce BC817-16W
Description  NPN Silicon AF Transistor (For general AF applications High collector current High current gain)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BC817-16W Fiches technique(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
Dec-19-1996
BC 817-16W
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC 817 W
IC = 10 mA, IB = 0 , BC 818 W
V(BR)CEO
25
45
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0 , BC 817 W
IC = 10 µA, IB = 0 , BC 818 W
V(BR)CBO
30
50
-
-
-
-
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector-base cutoff current
VCB = 25 V, TA = 25 °C
VCB = 25 V, TA = 150 °C
ICBO
-
-
-
-
50
100
nA
µA
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
100
nA
DC current gain
IC = 100 mA, VCE = 1 V, BC ... 16 W
IC = 100 mA, VCE = 1 V, BC ... 25 W
IC = 100 mA, VCE = 1 V, BC ... 40 W
IC = 300 mA, VCE = 1 V, BC ... 16 W
IC = 300 mA, VCE = 1 V, BC ... 25 W
IC = 300 mA, VCE = 1 V, BC ... 40 W
hFE
170
100
60
250
160
100
-
-
-
350
250
160
-
-
-
630
400
250
-
Collector-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.7
V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VBEsat
-
-
1.2
1) Pulse test: t < 300
µs; D < 2%


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