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ST1000C26K3 Datasheet(Fiches technique) 2 Page - Vishay Siliconix

Numéro de pièce ST1000C26K3
Description  Phase Control Thyristors (Hockey PUK Version), 1473 A
Télécharger  8 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

ST1000C26K3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 93714
2
Revision: 02-Feb-11
ST1000C..K Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1473 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
Double side (single side) cooled
1473 (630)
A
55 (85)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
6540
A
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
20.0
kA
t = 8.3 ms
21.2
t = 10 ms
100 % VRRM
reapplied
17.0
t = 8.3 ms
18.1
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
2000
kA2s
t = 8.3 ms
1865
t = 10 ms
100 % VRRM
reapplied
1445
t = 8.3 ms
1360
Maximum I2
t for fusing
I2
t
t = 0.1 ms to 10 ms, no voltage reapplied
20 000
kA2
s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
 x I
T(AV) < I <  x IT(AV)), TJ = TJ maximum
0.950
V
High level value of threshold voltage
VT(TO)2
(I >
 x I
T(AV)), TJ = TJ maximum
1.024
Low level value of on-state slope resistance
rt1
(16.7 % x
 x I
T(AV) < I <  x IT(AV)), TJ = TJ maximum
0.283
m
High level value of on-state slope resistance
rt2
(I >
 x I
T(AV)), TJ = TJ maximum
0.265
Maximum on-state voltage drop
VTM
Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse
1.80
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20
, t
r  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.9
μs
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
300
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA


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