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SS103CL-M3-87A Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SS103CL-M3-87A Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 89036 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 10-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10P2CL, SS10P3CL Vishay General Semiconductor New Product RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 0 2 4 6 8 12 10 0 25 50 75 100 125 150 175 Lead Temperature (°C) Resistive or Inductive Load T L measured at the Cathode Band Terminal 0 0.8 0.4 1.2 1.6 2.0 2.4 01 2 3 4 6 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 5 D = t p/T t p T 0.01 0.1 1 10 100 0.2 0.1 0.3 0 0.4 0.5 0.6 0.7 0.9 0.8 Instantaneous Forward Voltage (V) T A = 150 °C T A = 125 °C T A = 25 °C 0.001 0.01 0.1 1 10 1000 100 10 20 30 40 60 50 70 90 80 100 Percent of Rated Peak Reverse Voltage (%) T A = 150 °C T A = 125 °C T A = 25 °C 100 10 000 1000 0.1 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 0.1 1 10 100 1 10 100 t - Pulse Duration (s) Junction to Ambient |
Numéro de pièce similaire - SS103CL-M3-87A |
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Description similaire - SS103CL-M3-87A |
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