Moteur de recherche de fiches techniques de composants électroniques |
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BBY56-02W Fiches technique(PDF) 2 Page - Siemens Semiconductor Group |
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BBY56-02W Fiches technique(HTML) 2 Page - Siemens Semiconductor Group |
2 / 2 page BBY 56-02W Semiconductor Group Au -14-1998 2 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Values Symbol Unit max. min. typ. DC characteristics IR - Reverse current VR = 8 V 1 - nA IR µA - Reverse current VR = 8 V, TA = 65 °C 100 - AC characteristics Diode capacitance VR = 0.32 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz CT 59 39 22 19.4 15.9 - - - - - 67 43 27.2 23.7 19 pF Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz CT1/CT3 - 2.45 - - Series resistance VR = 1 V, f = 330 MHz rs - 0.3 - Ω Case capacitance f = 1 MHz CC - 0.09 - pF Series inductance chip to ground Ls - 0.6 - nH Semiconductor Group 2 1998-11-01 |
Numéro de pièce similaire - BBY56-02W |
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Description similaire - BBY56-02W |
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