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CSD16301Q2 Fiches technique(PDF) 1 Page - Texas Instruments

No de pièce CSD16301Q2
Description  N-Channel NexFET??Power MOSFETs
Download  9 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

CSD16301Q2 Fiches technique(HTML) 1 Page - Texas Instruments

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background image
1
D
2
D
D
3
D
4
D
5
G
6
S
S
P0108-01
VGS − Gate to Source Voltage − V
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
10
G006
ID = 4A
TC = 125°C
TC = 25°C
Qg − Gate Charge − nC
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
G003
ID = 4A
VDS = 12.5V
CSD16301Q2
www.ti.com
SLPS235C –OCTOBER 2009–REVISED JULY 2011
N-Channel NexFET
™ Power MOSFETs
Check for Samples: CSD16301Q2
1
FEATURES
PRODUCT SUMMARY
2
Ultralow Qg and Qgd
VDS
Drain to Source Voltage
25
V
Low Thermal Resistance
Qg
Gate Charge Total (–4.5V)
2
nC
Pb Free Terminal Plating
Qgd
Gate Charge Gate to Drain
0.4
nC
RoHS Compliant
VGS = 3V
27
mΩ
Halogen Free
RDS(on)
Drain to Source On Resistance
VGS = 4.5V
23
mΩ
SON 2-mm
× 2-mm Plastic Package
VGS = 8V
19
mΩ
VGS(th)
Threshold Voltage
1.1
V
APPLICATIONS
ORDERING INFORMATION
DC-DC Converters
Device
Package
Media
Qty
Ship
Battery and Load Management Applications
13-Inch
Tape and
3000
Reel
Reel
SON 2-mm × 2-mm
DESCRIPTION
CSD16301Q2
Plastic Package
7-Inch
Tape and
3000
The NexFET™ power MOSFET has been designed
Reel
Reel
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
ABSOLUTE MAXIMUM RATINGS
excellent thermal performance for the size of the
TA = 25°C unless otherwise stated
VALUE
UNIT
package.
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
+10 / –8
V
Figure 1. Top View
Continuous Drain Current, TC = 25°C
5
A
ID
Continuous Drain Current(1)
5
A
IDM
Pulsed Drain Current, TA = 25°C(2)
20
A
PD
Power Dissipation(1)
2.3
W
TJ,
Operating Junction and Storage
55 to 150
°
C
TSTG Temperature Range
Avalanche Energy, single pulse
EAS
10
mJ
ID = 14A, L = 0.1mH, RG = 25Ω
(1) Packaged Limited
(2) Pulse duration 10μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009–2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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