BBY53-03W datasheet(2/3 Pages) SIEMENS

No de pièce	BBY53-03W

Description	Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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2 / 3 page

Semiconductor Group

2

Sep-11-1996

BBY 53-03W

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 4 V, TA = 25 °C

VR = 4 V, TA = 65 °C

IR

-

200

10

nA

AC characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 3 V, f = 1 MHz

CT

1.85

4.8

2.4

5.3

3.1

5.8

pF

Capacitance ratio

VR = 1 V, VR = 3 V, f = 1 MHz

CT1/CT3

1.8

2.2

2.6

-

Series resistance

VR = 1 V, f = 1 GHz

rs

-

0.37

-

Ω

Case capacitance

f = 1 MHz

CC

-

0.12

-

pF

Series inductance chip to ground

Ls

-

2

-

nH

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BBY53-03W Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

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