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SL02-M Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SL02-M
Description  Small Signal Schottky Diodes
Download  6 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SL02-M Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number 85190
Rev. 1.9, 23-Jul-10
SL02-M, SL03-M, SL04-M
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Pulse test: 300 µs pulse width, 1 % duty cycle
Maximum DC blocking voltage
SL02-M
VDC
20
V
SL03-M
VDC
30
V
SL04-M
VDC
40
V
Maximum average forward
rectified current
Ttp = 109 °C
IF(AV)
1.1
A
Peak forward surge current
8.3 ms single half sine-wave
IFSM
40
A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air 1)
RthJA
180
K/W
Maximum operating junction
temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Instaneous forward voltage
SL02-M
VF
0.360
0.385
V
IF = 0.5 A
1)
SL03-M
VF
0.395
0.43
V
SL04-M
VF
0.450
0.51
V
Typical instantaneous forward
voltage
IF = 1.1 A
SL02-M
VF
0.420
V
SL03-M
VF
0.450
V
SL04-M
VF
0.530
V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
SL02-M
IR
250
μA
TA = 100 °C
SL02-M
IR
8mA
TA = 25 °C
SL03-M
IR
130
μA
TA = 100 °C
SL03-M
IR
6mA
TA = 25 °C
SL04-M
IR
20
μA
TA = 100 °C
SL04-M
IR
6mA
Parameter
Test condition
Part
Symbol
Value
Unit


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