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TPD2EUSB30ADRTR Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce TPD2EUSB30ADRTR
Description  2, 4-CHANNEL PROTECTION SOLUTION FOR SUPER-SPEED (6 GBPS) USB 3.0 INTERFACE
Download  16 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPD2EUSB30ADRTR Fiches technique(HTML) 3 Page - Texas Instruments

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TPD2EUSB30, TPD2EUSB30A, TPD4EUSB30
www.ti.com
SLVSAC2A – AUGUST 2010 – REVISED DECEMBER 2010
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IO voltage tolerance
D+, D– pins
0
6
TA
Operating free-air temperature range
–40
85
°C
Tstg
Storage temperature range
–65
125
°C
IEC 61000-4-2 Contact Discharge
D+, D– pins
±8
kV
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±8
kV
ESD protection
(TPD2EUSB30/A)
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±9
kV
(TPD4EUSB30)
Peak pulse current (tp = 8/20 ms)
D+, D– pins
5
A
Peak pulse power (tp = 8/20 ms)
D+, D– pins
45
W
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Reverse stand-off voltage,
D+,D– pins to ground
5.5
V
TPD2EUSB30, TPD4EUSB30
VRWM
Reverse stand-off voltage,
D+,D– pins to ground
3.6
V
TPD2EUSB30A
Vclamp
Clamp voltage
D+,D– pins to ground,
IIO = 1 A
8
V
IIO
Current from IO port to supply pins
VIO = 2.5 V,
ID = 8 mA
0.01
0.1
mA
D+,D– pins,
VIO = 2.5 V,
VD
Diode forward voltage
0.6
0.8
0.95
V
lower clamp diode,
ID = 8 mA
Rdyn
Dynamic resistance
D+,D– pins
I = 1 A
1
CIO-IO
Capacitance IO to IO
D+,D– pins
VIO = 2.5 V
0.05
pF
D+,D– pins (DRT)
0.7
CIO-GND Capacitance IO to GND
VIO = 2.5 V
pF
D1+, D1-,
0.8
D2+, D2- (DQA )
Break-down voltage, TPD2EUSB30,
IIO = 1 mA
7
V
TPD4EUSB30
VBR
Break-down voltage,
IIO = 1 mA
4.5
V
TPD2EUSB30A
Copyright © 2010, Texas Instruments Incorporated
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Product Folder Link(s): TPD2EUSB30, TPD2EUSB30A, TPD4EUSB30


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