SI7942DP datasheet(2/4 Pages) VISHAY

No de pièce	SI7942DP

Description	Dual N-Channel 100-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si7942DP

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.5

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 10 V

111

A

VGS = 10 V, ID = 5.9 A

0.042

0.041

Drain-Source On-State Resistance

a

rDS(on)

VGS = 6 V, ID = 5.5 A

0.048

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 5.9 A

12

14

S

Forward Voltage

a

VSD

IS = 2.9 A, VGS = 0 V

0.82

0.77

V

Dynamic

b

Total Gate Charge

Qg

17

16

Gate-Source Charge

Qgs

3.8

Gate-Drain Charge

Qgd

VDS = 50 V, VGS = 10 V, ID = 5.9 A

5.5

nC

Turn-On Delay Time

td(on)

12

15

Rise Time

tr

17

15

Turn-Off Delay Time

td(off)

22

35

Fall Time

tf

VDD = 50 V, RL = 50 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

23

20

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/µs

40

50

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 72204

S-60261

Rev. B, 27-Feb-06

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