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SI7137DP-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI7137DP-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 69063 S09-0865-Rev. D, 18-May-09 Vishay Siliconix Si7137DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 14.5 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 4.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 40 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 25 A 0.0016 0.00195 Ω VGS = - 4.5 V, ID = - 20 A 0.002 0.0025 VGS = - 2.5 V, ID = - 15 A 0.0031 0.0039 Forward Transconductancea gfs VDS = - 10 V, ID = - 25 A 95 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 20 000 pF Output Capacitance Coss 2150 Reverse Transfer Capacitance Crss 2650 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 20 A 390 585 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A 188 282 Gate-Source Charge Qgs 33.6 Gate-Drain Charge Qgd 46 Gate Resistance Rg f = 1 MHz 0.9 1.8 3.6 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 20 40 ns Rise Time tr 14 28 Turn-Off DelayTime td(off) 230 400 Fall Time tf 72 125 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 100 170 Rise Time tr 150 255 Turn-Off DelayTime td(off) 230 390 Fall Time tf 110 190 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 60 A Pulse Diode Forward Current ISM - 100 Body Diode Voltage VSD IS = - 5 A, VGS = 0 V - 0.64 - 1.1 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 88 140 ns Body Diode Reverse Recovery Charge Qrr 105 160 nC Reverse Recovery Fall Time ta 25 ns Reverse Recovery Rise Time tb 63 |
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