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SI7137DP-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI7137DP-T1-GE3
Description  P-Channel 20-V (D-S) MOSFET
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SI7137DP-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 69063
S09-0865-Rev. D, 18-May-09
Vishay Siliconix
Si7137DP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 14.5
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
4.1
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.5
- 1.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 25 A
0.0016
0.00195
Ω
VGS = - 4.5 V, ID = - 20 A
0.002
0.0025
VGS = - 2.5 V, ID = - 15 A
0.0031
0.0039
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 25 A
95
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
20 000
pF
Output Capacitance
Coss
2150
Reverse Transfer Capacitance
Crss
2650
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 20 A
390
585
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
188
282
Gate-Source Charge
Qgs
33.6
Gate-Drain Charge
Qgd
46
Gate Resistance
Rg
f = 1 MHz
0.9
1.8
3.6
Ω
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
20
40
ns
Rise Time
tr
14
28
Turn-Off DelayTime
td(off)
230
400
Fall Time
tf
72
125
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
100
170
Rise Time
tr
150
255
Turn-Off DelayTime
td(off)
230
390
Fall Time
tf
110
190
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 60
A
Pulse Diode Forward Current
ISM
- 100
Body Diode Voltage
VSD
IS = - 5 A, VGS = 0 V
- 0.64
- 1.1
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
88
140
ns
Body Diode Reverse Recovery Charge
Qrr
105
160
nC
Reverse Recovery Fall Time
ta
25
ns
Reverse Recovery Rise Time
tb
63


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