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SI7102DN-T1-GE3 Fiches technique(PDF) 7 Page - Vishay Siliconix |
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SI7102DN-T1-GE3 Fiches technique(HTML) 7 Page - Vishay Siliconix |
7 / 14 page Document Number: 74250 S-83044-Rev. B, 22-Dec-08 www.vishay.com 7 Vishay Siliconix Si7102DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74250. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 1 0.1 0.01 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 10-1 -4 1 0.1 0.01 Square Wave Pulse Duration (s) 10 1 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 |
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