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SI6924AEDQ Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI6924AEDQ
Description  N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI6924AEDQ Fiches technique(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si6924AEDQ
Document Number: 72215
S-81056-Rev. B, 12-May-08
www.vishay.com
1
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
FEATURES
Halogen-free
Low RDS(on)
•VGS Max Rating: 14 V
Exceeds 2 kV ESD Protection
28 V VDS Rated
Symmetrical Voltage Blocking (Off Voltage)
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
28
0.033 at VGS = 4.5 V
4.6
0.038 at VGS = 3.0 V
4.3
0.042 at VGS = 2.5 V
4.1
DESCRIPTION
The Si6924AEDQ is a dual N-Channel MOSFET with ESD
protection
and
gate
over-voltage
protection
circuitry
incorporated into the MOSFET. The device is designed for
use in Lithium Ion battery pack circuits. The common-drain
construction takes advantage of the typical battery pack
topology, allowing a further reduction of the device’s on-
resistance. The 2-stage input protection circuit is a unique
design, consisting of two stages of back-to-back zener
diodes separated by a resistor. The first stage diode is
designed to absorb most of the ESD energy. The second
stage diode is designed to protect the gate from any
remaining ESD energy and over-voltages above the gates
inherent safe operating range. The series resistor used to
limit the current through the second stage diode during over
voltage conditions has a maximum value which limits the
input current to
≤ 10 mA at 14 V and the maximum t
off to 12
µs. The Si6924AEDQ has been optimized as a battery or
load switch in Lithium Ion applications with the advantage of
both a 2.5 V RDS(on) rating and a safe 14 V gate-to-source
maximum rating.
APPLICATION CIRCUITS
Figure 1. Typical Use In a Lithium Ion Battery Pack
Battery Protection Circuit
ESD and
Overvoltage
Protection
ESD and
Overvoltage
Protection
*Thermal connection to drain pins is required to achieve specific performance
Figure 2. Input ESD and Overvoltage Protection Circuit
G
R**
S
D
**R typical value is 3.3 k
Ω by design.
See Typical Characteristics,
Gate-Current vs. Gate-Source Voltage, Page 3.
RoHS
COMPLIANT


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