SI6562CDQ datasheet(3/17 Pages) VISHAY

No de pièce	SI6562CDQ

Description	N- and P-Channel 20-V (D-S) MOSFETs

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 68954

S-82575-Rev. A, 27-Oct-08

www.vishay.com

3

Vishay Siliconix

Si6562CDQ

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

N-Channel

VDD = 10 V, RL = 2.2 Ω

ID ≅ 4.5 A, VGEN = 4.5 V, Rg = 1 Ω

P-Channel

VDD = - 10 V, RL = 2.4 Ω

ID ≅ - 4.1 A, VGEN = - 4.5 V, Rg = 1 Ω

N-Ch

12

20

ns

P-Ch

30

45

Rise Time

tr

N-Ch

10

15

P-Ch

25

40

Turn-Off Delay Time

td(off)

N-Ch

25

40

P-Ch

45

70

Fall Time

tf

N-Ch

10

15

P-Ch

15

25

Turn-On Delay Time

td(on)

N-Channel

VDD = 10 V, RL = 2.2 Ω

ID ≅ 4.5 A, VGEN = 10 V, Rg = 1 Ω

P-Channel

VDD = - 10 V, RL = 2.4 Ω

ID ≅ - 4.1 A, VGEN = - 10 V, Rg = 1 Ω

N-Ch

10

15

ns

P-Ch

10

15

Rise Time

tr

N-Ch

10

15

P-Ch

10

15

Turn-Off Delay Time

td(off)

N-Ch

20

30

P-Ch

45

70

Fall Time

tf

N-Ch

8

15

P-Ch

15

25

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

N-Ch

1.3

A

P-Ch

- 1.4

Pulse Diode Forward Currenta

ISM

N-Ch

30

P-Ch

- 30

Body Diode Voltage

VSD

IS = 4.5 A, VGS = 0 V

N-Ch

0.8

1.2

V

IS = - 4.1 A, VGS = 0 V

P-Ch

- 0.8

- 1.2

Body Diode Reverse Recovery Time

trr

N-Channel

IF = 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C

P-Channel

IF = - 4.1 A, dI/dt = - 100 A/µs, TJ = 25 °C

N-Ch

15

30

ns

P-Ch

35

55

Body Diode Reverse Recovery Charge

Qrr

N-Ch

6

12

nC

P-Ch

21

35

Reverse Recovery Fall Time

ta

N-Ch

7.6

ns

P-Ch

18

Reverse Recovery Rise Time

tb

N-Ch

7.4

P-Ch

17

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