SI5908DC-T1-GE3 datasheet(1/10 Pages) VISHAY

No de pièce	SI5908DC-T1-GE3

Description	Dual N-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si5908DC

Document Number: 73074

S10-0548-Rev. B, 08-Mar-10

www.vishay.com

1

Dual N-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

Ultra Low RDS(on) and Excellent Power

Handling in Compact Footprint

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•

PA Switch

•

Battery Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

20

0.040 at VGS = 4.5 V

5.9

0.045 at VGS = 2.5 V

5.6

0.052 at VGS = 1.8 V

5.2

Bottom View

1206-8 ChipFET®

S1

G1

S2

G2

D1

D2

1

Marking Code

CC

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5908DC-T1-E3 (Lead (Pb)-free)

Si5908DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

G1

S1

N-Channel

N-Channel MOSFET

D2

G2

S2

MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

5.9

4.4

A

TA = 85 °C

4.2

3.1

Pulsed Drain Current

IDM

20

Continuous Source Current (Diode Conduction)a

IS

1.8

0.9

Maximum Power Dissipationa

TA = 25 °C

PD

2.1

1.1

W

TA = 85 °C

1.1

0.6

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

50

60

°C/W

Steady State

90

110

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

30

40

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