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SI5513CDC-T1-GE3 Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI5513CDC-T1-GE3 Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 16 page www.vishay.com 4 Document Number: 68806 S10-0547-Rev. C, 08-Mar-10 Vishay Siliconix Si5513CDC N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 10 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =5 V thru 2.5 V VGS =1.5 V VGS =2 V 0.00 0.02 0.04 0.06 0.08 0.10 0 246 8 10 ID - Drain Current (A) VGS =2.5 V VGS =4.5 V 0 2 4 6 8 10 0123 456 Qg - Total Gate Charge (nC) VDS =16 V ID =4.4 A VDS =10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC =- 55 °C 0 80 160 240 320 400 04 8 12 16 20 Ciss VDS - Drain-to-Source Voltage (V) Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =4.5 V;ID =4.4 A VGS =2.5 V;ID =3.6 A |
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