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SI4916DY-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI4916DY-T1-GE3
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4916DY-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4916DY
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambienta
t
≤ 10 s
RthJA
54
65
47
60
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
32
38
30
35
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
Ch-1
30
V
Ch-2
30
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
Ch-1
24
mV/°C
Ch-2
25
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
Ch-1
- 6
V
Ch-2
- 6
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
1.5
3.0
Ch-2
1.5
2.7
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 20 V
Ch-1
100
nA
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-1
1
µA
Ch-2
100
VDS = 30 V, VGS = 0 V, TJ = 85 °C
Ch-1
15
Ch-2
2000
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Ch-1
20
A
Ch-2
20
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 10 A
Ch-1
0.0145
0.018
Ω
VGS = 10 V, ID = 10.5 A
Ch-2
0.015
0.018
VGS = 4.5 V, ID = 8.5 A
Ch-1
0.019
0.023
VGS = 4.5 V, ID = 9.3 A
Ch-2
0.018
0.022
Forward Transconductanceb
gfs
VDS = 15 V, ID = 10 A
Ch-1
30
S
VDS = 15 V, ID = 10.5 A
Ch-2
35
Diode Forward Voltageb
VSD
IS = 1.7 A, VGS = 0 V
Ch-1
0.75
1.1
V
IS = 1 A, VGS = 0 V
Ch-2
0.47
0.5
Dynamica
Total Gate Charge
Qg
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = - 10.5 A
Ch-1
6.6
10
nC
Ch-2
8.9
14
Gate-Source Charge
Qgs
Ch-1
2.9
Ch-2
3.4
Gate-Drain Charge
Qgd
Ch-1
2.3
Ch-2
2.4
Gate Resistance
Rg
Ch-1
0.5
1.9
2.9
Ω
Ch-2
0.5
2.3
3.5


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