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SI4914BDY Fiches technique(PDF) 10 Page - Vishay Siliconix

No de pièce SI4914BDY
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4914BDY Fiches technique(HTML) 10 Page - Vishay Siliconix

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Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Vishay Siliconix
Si4914BDY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2.2
4.4
6.6
8.8
11.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
0.8
1.6
2.4
3.2
4.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)


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