SI4714DY datasheet(3/10 Pages) VISHAY

No de pièce	SI4714DY

Description	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 67942

S11-1180-Rev. A, 13-Jun-11

www.vishay.com

3

Vishay Siliconix

Si4714DY

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

0

0.5

1

1.5

2

2.5

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 2 V

V

GS = 3 V

0.007

0.010

0.013

0.016

0.019

0.022

0

10

20

30

40

50

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

3.4

6.8

10.2

13.6

17.0

Q

g - Total Gate Charge (nC)

V

DS = 15 V

V

DS = 20 V

V

DS = 10 V

I

D = 10 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

2

3

4

5

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

200

400

600

800

1000

0

4

8

12

16

20

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

255075

100

125

150

T

J - Junction Temperature (°C)

I

D = 15 A

V

GS = 10 V

V

GS = 4.5 V

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