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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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Si4559ADY-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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Si4559ADY-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 15 page  www.vishay.com 2 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Vishay Siliconix Si4559ADY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 60 V VGS = 0 V, ID = - 250 µA P-Ch - 60 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 55 mV ID = - 250 µA P-Ch - 50 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 6 ID = - 250 µA P-Ch 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 3 V VDS = VGS, ID = - 250 µA P-Ch - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch 100 nA P-Ch - 100 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V N-Ch 1 µA VDS = - 60 V, VGS = 0 V P-Ch - 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 60 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V N-Ch 20 A VDS ≤ - 5 V, VGS = - 10 V P-Ch - 25 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 4.3 A N-Ch 0.046 0.058 Ω VGS = - 10 V, ID = - 3.1 A P-Ch 0.1 0.120 VGS = 4.5 V, ID = 3.9 A N-Ch 0.059 0.072 VGS = - 4.5 V, ID = - 0.2 A P-Ch 0.126 0.150 Forward Transconductanceb gfs VDS = 15 V, ID = 4.3 A N-Ch 15 S VDS = - 15 V, ID = - 3.1 A P-Ch 8.5 Dynamica Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 665 pF P-Ch 650 Output Capacitance Coss N-Ch 75 P-Ch 95 Reverse Transfer Capacitance Crss N-Ch 40 P-Ch 60 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch 13 20 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A P-Ch 14.5 22 N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A P-Channel VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A N-Ch 6 9 P-Ch 8 12 Gate-Source Charge Qgs N-Ch 2.3 P-Ch 2.2 Gate-Drain Charge Qgd N-Ch 2.6 P-Ch 3.7 Gate Resistance Rg f = 1 MHz N-Ch 2 3 Ω P-Ch 14 20 |
Numéro de pièce similaire - Si4559ADY-T1-GE3 |
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Description similaire - Si4559ADY-T1-GE3 |
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