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SI4618DY Fiches technique(PDF) 6 Page - Vishay Siliconix

No de pièce SI4618DY
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Download  15 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4618DY Fiches technique(HTML) 6 Page - Vishay Siliconix

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Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4618DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.00
0.24
0.48
0.72
0.96
1.20
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)


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