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SI4532CDY-T1-GE3 Fiches technique(PDF) 9 Page - Vishay Siliconix |
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SI4532CDY-T1-GE3 Fiches technique(HTML) 9 Page - Vishay Siliconix |
9 / 15 page Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 9 Vishay Siliconix Si4532CDY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 10 VSD -Source-to-Drain Voltage (V) 0.1 1 0.01 TJ = 150 °C 0.001 TJ = - 50 °C TJ = 25 °C -0.4 -0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =1mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.1 0.2 0.3 0.4 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 3.5 A 0 10 20 30 40 50 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms 100 s, DC 10 µs VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1s 10 s |
Numéro de pièce similaire - SI4532CDY-T1-GE3 |
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