SI4403CDY datasheet(2/4 Pages) VISHAY

No de pièce	SI4403CDY

Description	P-Channel 1.8 V (G-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 67520

2

S11-0400-Rev. A, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPICE Device Model Si4403CDY

Vishay Siliconix

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

SIMULATED

DATA

MEASURED

DATA

UNIT

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

0.50

-

V

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 9 A

0.0133

0.0125



VGS = - 2.5 V, ID = - 6 A

0.0150

0.0155

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 9 A

45

40

S

Diode Forward Voltage

VSD

IS = - 3 A

- 0.65

- 0.66

V

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

2360

2380

pF

Output Capacitance

Coss

345

340

Reverse Transfer Capacitance

Crss

286

280

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 8 V, ID = - 5 A

50

60

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A

30

36.5

Gate-Source Charge

Qgs

3.1

Gate-Drain Charge

Qgd

9.9

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