SI4286DY datasheet(1/10 Pages) VISHAY

No de pièce	SI4286DY

Description	Dual N-Channel 40 V (D-S) MOSFET

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Vishay Siliconix

Si4286DY

Document Number: 67599

S11-1151-Rev. A, 13-Jun-11

www.vishay.com

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 40 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Gen III Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converter

- External HDD

- Notebook System Power

•

LCD Display Backlighting

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

40

0.0325 at VGS = 10 V

7

3.3 nC

0.040 at VGS = 4.5 V

6.3

D1

G1

D1

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

S1

S2

Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 120 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

7

A

TC = 70 °C

5.6

TA = 25 °C

5.7b, c

TA = 70 °C

4.6b, c

Pulsed Drain Current (t = 300 µs)

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

2.4

TA = 25 °C

1.6b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

8

Single Pulse Avalanche Energy

EAS

3.2

mJ

Maximum Power Dissipation

TC = 25 °C

PD

2.9

W

TC = 70 °C

1.86

TA = 25 °C

1.9b, c

TA = 70 °C

1.23b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 10 s

RthJA

55

65

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

35

43

Numéro de pièce similaire - SI4286DY

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Vishay Telefunken	SI4286DY	262Kb / 10P	Dual N-Channel 40 V (D-S) MOSFET
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