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SI4048DY-T1-GE3 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI4048DY-T1-GE3 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 66816 S10-2009-Rev. A, 06-Sep-10 www.vishay.com 3 Vishay Siliconix Si4048DY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10Vthru 4V VGS =3 V V DS - Drain-to-Source Voltage (V) 0.006 0.007 0.008 0.009 0.010 0.011 0 16324864 80 ID - Drain Current (A) VGS =4.5 V VGS =10V 0 2 4 6 8 10 0 7 14 21 28 35 ID =10 A Qg - Total Gate Charge (nC) VDS =20V VDS =15V VDS =10V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1234 5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C Crss 0 520 1040 1560 2080 2600 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) ID =15A VGS =10V VGS =4.5 V |
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