SI3900DV_09 datasheet(1/9 Pages) VISHAY

No de pièce	SI3900DV

Description	Dual N-Channel 20-V (D-S) MOSFET

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Vishay Siliconix

Si3900DV

Document Number: 71178

S09-2275-Rev. D, 02-Nov-09

www.vishay.com

1

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

20

0.125 at VGS = 4.5 V

2.4

0.200 at VGS = 2.5 V

1.8

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

Ordering Information: Si3900DV-T1-E3 (Lead (Pb)-free)

Si3900DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

2.4

2.0

A

TA = 85 °C

1.7

1.4

Pulsed Drain Current (10 µs Pulse Width)

IDM

8

Continuous Source Current (Diode Conduction)a

IS

1.05

0.75

Maximum Power Dissipationa

TA = 25 °C

PD

1.15

0.83

W

TA = 85 °C

0.59

0.53

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

93

110

°C/W

Steady State

130

150

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

75

90

Numéro de pièce similaire - SI3900DV_09

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Vishay Siliconix	SI3900DV	92Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. C, 28-Feb-05

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