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SI3586DV Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI3586DV Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 Vishay Siliconix Si3586DV Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.40 1.1 V VDS = VGS, ID = - 250 µA P-Ch - 0.40 - 1.1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V N-Ch ± 100 nA VDS = 0 V, VGS = ± 8 V P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 µA VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 85 °C P-Ch - 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 5 A VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 5 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 3.4 A N-Ch 0.047 0.060 Ω VGS = - 4.5 V, ID = - 2.5 A P-Ch 0.086 0.110 VGS = 2.5 V, ID = 3.2 A N-Ch 0.054 0.070 VGS = - 2.5 V, ID = - 2.0 A P-Ch 0.116 0.145 VGS = - 1.8 V, ID = - 2.5 A N-Ch 0.075 0.100 VGS = - 1.8 V, ID = - 1.0 A P-Ch 0.170 0.220 Forward Transconductancea gfs VDS = 5 V, ID = 3.4 A N-Ch 13 S VDS = - 5 V, ID = - 2.5 A P-Ch 6 Diode Forward Voltagea VSD IS = 1.05 A, VGS = 0 V N-Ch 0.8 1.1 V IS = - 1.05 A, VGS = 0 V P-Ch - 0.8 - 1.1 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.4 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A N-Ch 4.1 6.0 nC P-Ch 5 7.5 Gate-Source Charge Qgs N-Ch 0.65 P-Ch 0.68 Gate-Drain Charge Qgd N-Ch 0.8 P-Ch 1.3 Gate Resistance Rg N-Ch 2.6 Ω P-Ch 9.8 Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω N-Ch 30 45 ns P-Ch 28 45 Rise Time tr N-Ch 52 85 P-Ch 55 85 Turn-Off Delay Time td(off) N-Ch 25 40 P-Ch 55 85 Fall Time tf N-Ch 20 30 P-Ch 32 50 Source-Drain Reverse Recovery Time trr IF = 1.05 A, dI/dt = 100 A/µs N-Ch 25 40 IF = - 1.05 A, dI/dt = 100 A/µs P-Ch 25 40 |
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