SI3424CDV datasheet(5/11 Pages) VISHAY

No de pièce	SI3424CDV

Description	N-Channel 30 V (D-S) MOSFET

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Document Number: 67443

S11-0863-Rev. A, 02-May-11

www.vishay.com

5

Vishay Siliconix

Si3424CDV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

6

9

12

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power Derating, Junction-to-Foot

0

0.9

1.8

2.7

3.6

4.5

025

50

75

100

125

150

T

C - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.2

0.4

0.6

0.8

1.0

0

255075

100

125

150

T

A - Ambient Temperature (°C)

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