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SI1922EDH Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI1922EDH
Description  Dual N-Channel 20 V (D-S) MOSFET
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Document Number: 67192
S10-2766-Rev. A, 29-Nov-10
Vishay Siliconix
Si1922EDH
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
20
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 2.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.4
1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 25
µA
VDS = 0 V, VGS = ± 4.5 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
4
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 1 A
0.165
0.198
VGS = 2.5 V, ID = 1 A
0.187
0.225
VGS = 1.8 V, ID = 0.2 A
0.210
0.263
Forward Transconductancea
gfs
VDS = 4 V, ID = 1.5 A
4
S
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 8 V, ID = 1.5 A
1.6
2.5
nC
VDS = 10 V, VGS = 4.5 V, ID = 1.5 A
0.9
1.8
Gate-Source Charge
Qgs
0.1
Gate-Drain Charge
Qgd
0.2
Gate Resistance
Rg
f = 1 MHz
0.4
1.9
3.8
k
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 8.3 
ID  1.2 A, VGEN = 4.5 V, Rg = 1 
43
65
ns
Rise Time
tr
80
120
Turn-Off Delay Time
td(off)
480
720
Fall Time
tf
220
330
Turn-on Delay Time
td(on)
VDD = 10 V, RL = 8.3 
ID  1.2 A, VGEN = 8 V, Rg = 1 
22
33
Rise Time
tr
46
70
Turn-Off Delay Time
td(off)
645
968
Fall Time
tr
215
323
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1
A
Pulse Diode Forward Current
ISM
4
Body Diode Voltage
VSD
IS = 1.2 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C
918
ns
Body Diode Reverse Recovery Charge
Qrr
24
nC
Reverse Recovery Fall Time
ta
5
ns
Reverse Recovery Rise Time
tb
4


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