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SI1922EDH Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI1922EDH Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 67192 S10-2766-Rev. A, 29-Nov-10 Vishay Siliconix Si1922EDH Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 20 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 2.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 25 µA VDS = 0 V, VGS = ± 4.5 V 1 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 4 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1 A 0.165 0.198 VGS = 2.5 V, ID = 1 A 0.187 0.225 VGS = 1.8 V, ID = 0.2 A 0.210 0.263 Forward Transconductancea gfs VDS = 4 V, ID = 1.5 A 4 S Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 1.5 A 1.6 2.5 nC VDS = 10 V, VGS = 4.5 V, ID = 1.5 A 0.9 1.8 Gate-Source Charge Qgs 0.1 Gate-Drain Charge Qgd 0.2 Gate Resistance Rg f = 1 MHz 0.4 1.9 3.8 k Turn-On Delay Time td(on) VDD = 10 V, RL = 8.3 ID 1.2 A, VGEN = 4.5 V, Rg = 1 43 65 ns Rise Time tr 80 120 Turn-Off Delay Time td(off) 480 720 Fall Time tf 220 330 Turn-on Delay Time td(on) VDD = 10 V, RL = 8.3 ID 1.2 A, VGEN = 8 V, Rg = 1 22 33 Rise Time tr 46 70 Turn-Off Delay Time td(off) 645 968 Fall Time tr 215 323 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1 A Pulse Diode Forward Current ISM 4 Body Diode Voltage VSD IS = 1.2 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C 918 ns Body Diode Reverse Recovery Charge Qrr 24 nC Reverse Recovery Fall Time ta 5 ns Reverse Recovery Rise Time tb 4 |
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