SI1317DL datasheet(2/4 Pages) VISHAY

No de pièce	SI1317DL

Description	P-Channel 20 V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 67525

2

S11-0395-Rev. A, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPICE Device Model Si1317DL

Vishay Siliconix

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

SIMULATED

DATA

MEASURED

DATA

UNIT

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

0.70

-

V

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 1.4 A

0.126

0.125



VGS = - 2.5 V, ID = - 1.2 A

0.160

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 1.4 A

4.5

5

S

Diode Forward Voltage

VSD

IS = - 0.7 A

- 0.70

- 0.80

V

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

273

272

pF

Output Capacitance

Coss

56

55

Reverse Transfer Capacitance

Crss

45

44

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 4.5 V, ID = - 1.4 A

3.4

4.3

nC

VDS = - 10 V, VGS = - 2.5 V, ID = - 1.4 A

2.2

2.7

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

11

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