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MJE802T Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce MJE802T
Description  isc Silicon NPN Darlington Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE802T Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
MJE802T
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 80 V
·DC Current Gain—
: hFE = 750(Min) @ IC= 2A
·Complement to Type MJE702T
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
B
Base Current
0.1
A
PC
Collector Power Dissipation
TC=25℃
50
W
Ti
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃/W
isc Website:www.iscsemi.cn


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