Moteur de recherche de fiches techniques de composants électroniques |
|
IRFZ48S Fiches technique(PDF) 2 Page - Vishay Siliconix |
|
IRFZ48S Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 90377 2 S11-1045-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Uses IRFZ48/SiHFZ48 data and test conditions. d. Calculated continuous current based on maximum allowable junction temperature. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mount)a RthJA -40 °C / W Maximum Junction-to-Case (Drain) RthJC -0.8 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mAc - 0.060 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 43 Ab - - 0.018 Forward Transconductance gfs VDS = 25 V, ID = 43 Ab 27 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c - 2400 - pF Output Capacitance Coss - 1300 - Reverse Transfer Capacitance Crss - 190 - Total Gate Charge Qg VGS = 10 V ID = 72 A, VDS = 48 V, see fig. 6 and 13b, c - - 110 nC Gate-Source Charge Qgs -- 29 Gate-Drain Charge Qgd -- 36 Turn-On Delay Time td(on) VDD = 30 V, ID = 72 A, Rg = 9.1 , RD = 0.34 , see fig. 10b, c -8.1 - ns Rise Time tr - 250 - Turn-Off Delay Time td(off) - 210 - Fall Time tf - 250 - Internal Source Inductance LS Between lead, and center of die contact - 7.5 - nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 50c A Pulsed Diode Forward Currenta ISM - - 290 Body Diode Voltage VSD TJ = 25 °C, IS = 72 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb, c - 120 180 ns Body Diode Reverse Recovery Charge Qrr - 500 800 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
Numéro de pièce similaire - IRFZ48S_11 |
|
Description similaire - IRFZ48S_11 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |