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BU433 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU433 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU433 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L= 25mH B 375 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 1.6 V ICES Collector Cutoff Current VCEM=900V;VBE= 0 VCEM=900V;VBE= 0;TJ=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE DC Current Gain IC= 0.6A ; VCE= 5V 40 fT Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V;ftest= 1MHz 6 MHz Switching Times ton Turn-On Time 0.5 0.6 μs tstg Storage Time 2.0 3.5 μs tf Fall Time IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V 0.45 0.7 μs isc Website:www.iscsemi.cn 2 |
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