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BDW83C Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW83C Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D DESCRIPTION ・With TO-3PN package ・Complement to type BDW84/84A/84B/84C/84D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDW83 45 BDW83A 60 BDW83B 80 BDW83C 100 VCBO Collector-base voltage BDW83D Open emitter 120 V BDW83 45 BDW83A 60 BDW83B 80 BDW83C 100 VCEO Collector-emitter voltage BDW83D Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 0.5 A TC=25℃ 150 PC Collector power dissipation Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
Numéro de pièce similaire - BDW83C |
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Description similaire - BDW83C |
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