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2SD1653 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SD1653
Description  isc Silicon NPN Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
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2SD1653 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1653
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 100mA; RBE= ∞
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
1500
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
B
8.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
tf
Fall Time
IC= 2A, IB1= 0.6A; IB2= -1.2A
0.4
μs
isc Website：www.iscsemi.cn
2


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