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2SD1047 Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce 2SD1047
Description  Silicon NPN Power Transistors
Télécharger  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1047 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1047 Datenblatt HTML 1Page - Inchange Semiconductor Company Limited 2SD1047 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD1047 Datenblatt HTML 3Page - Inchange Semiconductor Company Limited 2SD1047 Datenblatt HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SD1047
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
140
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
2.5
V
VBE
Base-emitter on voltage
IC=1A;VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=80V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
200
hFE-2
DC current gain
IC=6A ; VCE=5V
20
fT
Transition frequency
IC=1A ; VCE=5V
15
MHz
COB
Collector output capacitance
f=1MHz;VCB=10V
210
pF
Switching times
ton
Turn-on time
0.26
μs
ts
Storage time
6.88
μs
tf
Fall time
IC=1.0A; IB1=-IB2=0.1A
VCC=20V ,RL=20Ω
0.68
μs
hFE-1 Classifications
D
E
60-120
100-200


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