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2SC3590 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3590 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3590 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 330 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 1A; VCE= 1V 15 hFE-2 DC Current Gain IC= 5A; VCE= 1V 10 50 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 40 MHz tf Fall Time IC= 5A, IB1= -IB2= 0.5A 0.3 μs isc Website:www.iscsemi.cn 2 |
Numéro de pièce similaire - 2SC3590 |
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Description similaire - 2SC3590 |
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