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DBF250 Fiches technique(PDF) 1 Page - Sanyo Semicon Device

No de pièce DBF250
Description  25A Single-Phase Bridge Rectifier
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

DBF250 Fiches technique(HTML) 1 Page - Sanyo Semicon Device

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DBF250
No.6567-1/3
Features
Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : VRM=200, 600V.
Average output current : IO=25A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
DBF250C
DBF250G
Unit
Peak Reverse Voltage
VRM
200
600
V
Average Output Current
IO
Tc=98°C, With heatsink
25
A
Ta=25°C, Without heatsink
3.5
A
Surge Forward Current
IFSM
50Hz sine 1cycle peak value
350
A
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--40 to +150
°C
Dilective Strength Voltage
Vdis
Terminals tc case, AC 1 minute
2.5
kV
Tightening Torque
TOR
( ): recommended value
0.8(0.5)
N•m
Electrical Characteristics at Ta=25°C Per Constituent element of bridge.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Voltage
VF
IF=12.5A
1.05
V
Reverse Current
IR
VR=At each VRM
10
μA
Thremal Resistance(Junction-Ambient)
Rth(j-a)
Without heatsink
22
°C / W
Thremal Resistance(Junction-Case)
Rth(j-c)
With heatsink
1
°C / W
Thremal Resistance(Junction-Lead)
Rth(j-l)
Without heatsink
5
°C / W
SANYO Semiconductors
DATA SHEET
Ordering number : EN6567A
83006RB MS IM TC-00000159 / 42800 GI IM
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
DBF250
Diffused Junction Silicon Diode
25A Single-Phase Bridge Rectifier


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