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DBF250 Fiches technique(PDF) 1 Page - Sanyo Semicon Device |
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DBF250 Fiches technique(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page DBF250 No.6567-1/3 Features • Glass passivation for high reliability. • Plastic molded structure. • Peak reverse voltage : VRM=200, 600V. • Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions DBF250C DBF250G Unit Peak Reverse Voltage VRM 200 600 V Average Output Current IO Tc=98°C, With heatsink ➝ 25 A Ta=25°C, Without heatsink ➝ 3.5 A Surge Forward Current IFSM 50Hz sine 1cycle peak value ➝ 350 A Junction Temperature Tj ➝ 150 °C Storage Temperature Tstg ➝ --40 to +150 °C Dilective Strength Voltage Vdis Terminals tc case, AC 1 minute ➝ 2.5 kV Tightening Torque TOR ( ): recommended value ➝ 0.8(0.5) N•m Electrical Characteristics at Ta=25°C Per Constituent element of bridge. Ratings Parameter Symbol Conditions min typ max Unit Forward Voltage VF IF=12.5A 1.05 V Reverse Current IR VR=At each VRM 10 μA Thremal Resistance(Junction-Ambient) Rth(j-a) Without heatsink 22 °C / W Thremal Resistance(Junction-Case) Rth(j-c) With heatsink 1 °C / W Thremal Resistance(Junction-Lead) Rth(j-l) Without heatsink 5 °C / W SANYO Semiconductors DATA SHEET Ordering number : EN6567A 83006RB MS IM TC-00000159 / 42800 GI IM Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN DBF250 Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier |
Numéro de pièce similaire - DBF250_10 |
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Description similaire - DBF250_10 |
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