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BAS86-M Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce BAS86-M
Description  Small Signal Schottky Diode
Download  4 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAS86-M Fiches technique(HTML) 1 Page - Vishay Siliconix

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BAS86-M
Document Number 83402
Rev. 1.0, 13-Jan-11
Vishay Semiconductors
www.vishay.com
1
94 9371
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard
ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free
according
to
IEC
61249-2-21
definition
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part
Ordering code
Type marking
Remarks
BAS86-M
BAS86-M-18 or BAS86-M-08
-
Tape and reel
Parameter
Test condition
Symbol
Value
Unit
Continuous reverse voltage
VR
50
V
Forward continuous current
IF
2001)
mA
Repetitive peak forward current
tp < 1 s, ν ≤ 0.5
IFRM
5001)
mA
Power dissipation1)
Ptot
2001)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
3001)
K/W
Junction temperature
Tj
125
°C
Ambient operating temperature
range
Tamb
- 65 to + 125
°C
Storage temperature range
TS
- 65 to +150
°C


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