 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
FM16W08-SG Fiches technique(PDF) 1 Page - Ramtron International Corporation |
|
||||||||||||||||||||||||||||||
FM16W08-SG Fiches technique(HTML) 1 Page - Ramtron International Corporation |
|
|
1 / 11 page  Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.2 http://www.ramtron.com Mar. 2011 Page 1 of 11 FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion (10 14) Read/Writes • 38 year Data Retention (@ +75C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration • Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible • JEDEC 8Kx8 SRAM & EEPROM pinout • 70 ns Access Time • 130 ns Cycle Time Low Power Operation • Wide Voltage Operation 2.7V to 5.5V • 12 mA Active Current • 20 µA (typ.) Standby Current Industry Standard Configuration • Industrial Temperature -40 ° C to +85° C • 28-pin “Green”/RoHS SOIC Package Description The FM16W08 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM16W08 is very similar to other RAM devices. Minimum read- and write- cycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM16W08 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM16W08 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Ordering Information FM16W08-SG 28-pin “Green” SOIC NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ7 CE A10 OE A11 A9 A8 NC WE VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 |
Numéro de pièce similaire - FM16W08-SG |
|
Description similaire - FM16W08-SG |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
