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2N5050 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5050 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5050 2N5051 2N5052 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5050 125 2N5051 150 VCEO(SUS) Collector-emitter sustaining voltage 2N5052 IC=0.1A ;IB=0 200 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.5A 1.5 V VBE Base-emitter on voltage IC=750mA ; VCE=5V 1.2 V 2N4910 VCE=125V; IB=0 2N4911 VCE=150V; IB=0 ICEO Collector cut-off current 2N4912 VCE=200V; IB=0 5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=750mA ; VCE=5V 25 100 fT Transition frequency IC=500mA;VCE=10V;f=1MHz 10 MHz |
Numéro de pièce similaire - 2N5050 |
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Description similaire - 2N5050 |
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