FMX-G16S datasheet(2/5 Pages) SANKEN

No de pièce	FMX-G16S

Description	Silicon Diode

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Fabricant	SANKEN [Sanken electric]

Site Internet	http://www.sanken-ele.co.jp/en

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SANKEN ELECTRIC CO., LTD.

FMX-G16S

031215

2／5

61426-01

4. Absolute maximum ratings

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

VRSM

V

600

2

Peak Reverse Voltage

VRM

V

600

3

Average Forward Current

IF(AV)

A

5.0

Refer to Derating of 7

4

Peak Surge Forward Current

IFSM

A

50

10msec.

Half sinewave, one shot

5

I2t Limiting Value

I2t

A2s

12.5

1msec ≤t ≤10msec

6

Junction Temperature

Tj

°C

-40~+150

7

Storage Temperature

Tstg

°C

-40~+150

5. Electrical characteristics (Ta=25°C ，unless otherwise specified)

No

.

Item

Symbol

Unit

Value

Conditions

1

Forward Voltage Drop

VF

V

1.5 max.

IF=5.0A

2

Reverse Leakage Current

IR

uA

50 max.

VR=VRM

3

Reverse Leakage Current Under

High Temperature

H･IR

mA

15 max.

VR=VRM, Tj=150°C

4

Reverse Recovery Time

trr1

ns

30 max.

IF=IRP=500mA

90% Recovery point, Tj=25°C

trr2

ns

25 max.

IF=500mA,IRP=1A

75% Recovery point ,Tj=25°C

5

Thermal Resistance

Rth(j-c)

°C /W

4.0 max.

Between Junction and case

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