STP8N65M5 datasheet(8/25 Pages) STMICROELECTRONICS

No de pièce	STP8N65M5

Description	N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

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Electrical characteristics

STB/D/F/I/P/U8N65M5

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Doc ID 16531 Rev 3

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on resistance vs

temperature

Figure 16.

Switching losses vs gate resistance

(1)

Figure 17.

Normalized BVDSS vs temperature

1.

Eon including reverse recovery of a SiC diode

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

AM08204v1

RDS(on)

2.0

1.5

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

1.0

ID=3.5A

VGS=10V

AM08205v1

E

100

10

1

0

20

RG(

Ω)

(

μJ)

10

30

40

ID=4A

VCL=400V

VGS=10V

Eon

Eoff

AM08206v1

BVDSS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.93

0.95

0.97

0.99

1.01

1.03

1.05

1.07

ID=1mA

AM08203v1

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Description similaire - STP8N65M5

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STL8N65M5	1Mb / 13P	N-channel 650 V, 0.56, 7 A MDmesh V Power MOSFET in PowerFLAT 5x5
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