BAS40DW-04 datasheet(1/3 Pages) MCC

No de pièce	BAS40DW-04

Description	200mW SCHOTTKY BARRIER Diode

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Fabricant	MCC [Micro Commercial Components]

Site Internet	http://www.mccsemi.com

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BAS40TW/DW-04/

200mW

SCHOTTKY BARRIER

Features

•

Fast Switching

•

Low Forward Voltage Drop

•

Low Power Dissipation

•

Ultra-Small Surface Mount Package

Maximum Ratings

Symbol

Rating

Unit

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

40

V

Io

Average Rectified Output Current

200

mA

R©JA

Thermal Resistance Junction to Ambient

625

/W

PD

Power dissipation

200

mW

TJ

Junction Temperature

-55 to +125------------

TSTG

Storage Temperature

-65 to +125

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Test Conditions

IR

Reverse Voltage Leakage

Current

---

200nA

VR=30V

VF

Forward Voltage

---

0.38V

1.0V

IF=1mA

IF=40mA

CT

Total Capacitance

---

5pF

VR=0V, f=1MHZ

trr

Reverse Recovery Time

---

5.0ns

IF=10mA,IR=IF=1mA

RL=100

Revision: A

2011/01/01

SOT-363

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.006

.014

0.15

0.35

B

.045

.053

1.15

1.35

C

.085

.096

2.15

2.45

D

.026

0.65Nominal

G

.047

.055

1.20

1.40

H

.071

.087

1.80

2.20

J

---

.004

---

0.10

K

.035

.043

0.90

1.10

L

.010

.018

0.26

0.46

M

.003

.006

0.08

0.15

J

M

A

C

B

G

H

K

D

L

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

TM

Micro Commercial Components

DW-05 /DW-06 /BRW

DIMENSIONS

Diode

I R=10

µA

V(BR)

Reverse breakdown voltage

40V

-----

BAS40DW-05

Marking: K45

BAS40TW

Marking: K43

BAS40DW-04

Marking: K44

A

1

A

2

C

2

C

1

C

2

C

1

BAS40DW-06

Marking: K461

C

1

C

2

A

2

A

1

A

2

A

1

AC

1

AC

2

C

2

A

1

A

2

C

1

AC

1

AC

2

C

1

A

1

C

2

A

2

C

1

A

3

C

2

A

1

C

3

A

2

BAS40BRW

Marking: K47

www.mccsemi.com

1 of 3

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

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