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BD3925HFP-C Fiches technique(PDF) 8 Page - Rohm |
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BD3925HFP-C Fiches technique(HTML) 8 Page - Rohm |
8 / 10 page Technical Note 8/9 BD3925FP-C,BD3925HFP-C www.rohm.com 2011.03 - Rev.B © 2011 ROHM Co., Ltd. All rights reserved. 12. About positive surge voltage To protect against a surge voltage that exceeds 50V between Vcc and GND please insert a power zener diode between Vcc terminal and GND. 13. About negative surge voltage To protect against a negative surge voltage, please insert a Schottky diode between the Vcc terminal and GND. 14. For an infinitesimal fluctuations of output voltage At the use of the application that infinitesimal fluctuations of output voltage caused by some factors (e.g. disturbance noise, input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g. insert the filter, etc.). 15. We recommend using Diode for protection purpose when the temperature so output voltage is off. This is to prevent against large loads of impedance or reverse current during initial stages or output off stage 16. This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when the resistors and transistors are connected to the pins as shown in the following figure, ○ The P/N junction functions as a parasitic diode when GND > Pin A for the resistor or GND > Pin B for the transistor (NPN). ○ Similarly, when GND > Pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage to input pins. Keep in mind that the IC may malfunction in strong magnetic fields., Vcc GND D1 Vcc GND D1 Parasitic elements (Pin A) Parasitic elements or Transistors (Pin B) GND C B E Resistor Parasitic elements (Pin A) GND N P N P+ P+ P substrate Parasitic elements or Transistors P substrate GND N P N N P+ P+ (Pin B) C B Transistor (NPN) N E Example of Simple Monolithic IC Architecture |
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Description similaire - BD3925HFP-C |
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